Apparatus and methods having majority bit detection

ABSTRACT

Electronic apparatus and fabrication of the electronic apparatus that includes detection of the majority of values in a plurality of data bits may be used in a variety of applications. Embodiments include application of majority bit detection to process data bits in a device for further analysis in the device based on the results of the majority bit detection. In an embodiment, such further processing in a memory device after majority bit detection may include data bit inversion prior to outputting the data from the memory device.

This application is a divisional of U.S. patent application Ser. No.12/114,613, filed on May 2, 2008, which is incorporated by reference inits entirety.

BACKGROUND

Operating electronic devices includes the consumption of power.Consumption of power can lead to depletion of a power supply, increasedoperational costs, and performance degradation associated with heatingand other effects associated with current flows in the electronicdevices. In complex devices, such as memories, there exist numerousoperational current paths. Reducing power consumption in a memorywithout design complexity or significant impact to the speed ofoperation may enhance the overall performance of the memory.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows features of a method that includes performing a majoritydetection process for possible data bit inversion of bits representingdata prior to output the data from a memory device, according to variousembodiments of the invention.

FIG. 2 shows a block diagram of features of a memory apparatusconfigured with a mechanism to apply a majority detect process and adata bit inversion process to data bits within the memory apparatus,according to various embodiments of the invention.

FIG. 3 illustrates features of an apparatus that uses a majoritydetection process, according to various embodiments of the invention.

FIG. 4 illustrates features of a memory device that uses a majoritydetection process and data bit inversion process within the memorydevice, according to various embodiments of the invention.

FIG. 5 illustrates an embodiment of a driver that may be implemented inthe memory device of FIG. 4.

FIG. 6 illustrates an embodiment of a datapath 600 that may beimplemented in the memory device of FIG. 4 in conjunction with a driversuch as illustrated in FIG. 5.

FIG. 7 shows a block diagram of features of a majority detection unit,according to various embodiments of the invention.

FIG. 8 shows a block diagram of features of a majority detector that maybe implemented in conjunction with various structures and methods, suchas shown in FIGS. 1-6, according to various embodiments of theinvention.

FIG. 9A shows a block diagram illustrating features of a memory devicethat includes a majority detection process in which a number of bitsfrom a group of data bits are excluded from the majority detectionprocess, according to various embodiments of the invention.

FIG. 9B shows a block diagram illustrating features of a memory devicethat includes a majority detection process in which a number of bitsfrom a group of data bits are excluded from the majority detectionprocess, according to various embodiments of the invention.

FIG. 10 shows a block diagram of an electronic system, according tovarious embodiments of the invention.

FIG. 11 shows a block diagram of a system having a controller and amemory including one or more embodiments for a majority detection unitand drivers that operate to realize a data bit inversion process withinthe memory prior to output of data, according to various embodiments ofthe invention.

FIG. 12 shows features of a method that includes forming an apparatushaving a memory device with a majority detection process for possibledata bit inversion of bits representing data prior to output the datafrom a memory device, according to various embodiments of the invention.

FIG. 13 shows features of a method that includes forming an apparatus toprovide a signal indicative of a majority of a value in a group ofpossible values, according to various embodiments of the invention.

DETAILED DESCRIPTION

The following detailed description refers to the accompanying drawingsthat show, by way of illustration, various embodiments of the presentinvention. These embodiments are described in sufficient detail toenable those skilled in the art to practice these and other embodiments.Other embodiments may be utilized, and structural, logical, andelectrical changes may be made to these embodiments. The variousembodiments are not necessarily mutually exclusive, as some embodimentscan be combined with one or more other embodiments to form newembodiments. The following detailed description is, therefore, not to betaken in a limiting sense.

FIG. 1 shows features of a method that includes performing a majoritydetection process for possible data bit inversion of bits representingdata prior to output the data from a memory device, according to variousembodiments of the invention. A majority detection process herein is aprocess in which a determination in made as to what value representationoccurs most often in an electrical representation of a specified datastructure. In a binary digital system, a majority detection processdetermines whether a set of bits representing data has more one bits,“1,” or more zero bits, “0.” In some applications or systems, a one bitis represented by a voltage higher in magnitude than a voltage for azero bit. In other applications or systems, a zero bit is represented bya voltage higher in magnitude than a voltage for a one bit.Additionally, some applications may consider the polarity of the voltagerelative to some reference to define zeros and ones. In someapplications or systems, a one bit is associated with a current higherin magnitude than a current for a zero bit. In other applications orsystems, a zero is associated with a current higher in magnitude than acurrent for a one bit. Additionally, some applications may consider thedirection of the current flow relative to some reference to define zerosand ones. The embodiments described herein are not limited by theseapplications.

Depending on the system architecture for providing data as data bits,such as a group of zeros and ones, from a memory device to a controller,the provisioning of the data bits may be realized by procedures thatinclude turning on devices, such as transistors, depending on when thedata bits have one of the two binary values. When the device, such as atransistor turns on, current flows through the transistor, consumingpower. In some architectures, transferring a zero causes a particulartransistor in the path of the zero data bit to turn on, whiletransferring a one bit in the same path causes the particular transistorto remain off. In other architectures, transferring a one causes aparticular transistor in the path of the one data bit to turn on, whiletransferring a zero bit in the same path causes the particulartransistor to remain off. For data represented by a group of bits, thetransfer process can consume more power when the bits in the group beingtransferred are of the type that cause transfer devices to turn on. Databit inversion (DBI) provides a technique in which data bits are invertedfrom a state that causes power consumption to the inverted state thatuses less power. Data bits provided to a controller can be accompaniedby a data bit inversion signal that provides an indication to thecontroller whether the data bits received by the controller are theactual data bits, representing specific data, or an inversion of theactual data bits. Data represented by a group or groups of bits may bereferred to as a data word.

At 110, a majority detection process is applied in a memory device, withrespect to the output of data stored in the memory device, to determinewhether a plurality of data bits have more one bits or more zero bits,where the plurality of data bits are a subset of bits representing thedata. The subset of bits representing data operatively stored in thememory device may be the full set of data bits that define the data.Alternatively, the set of bits representing the data may be arrangedinto groups of bits. Each group of bits may include a number of bits towhich the majority detection process is not applied. In an embodiment,the first two bits of each group of bits are excluded from the majoritydetection process. The exclusion may be realized by skipping these bitswhen the other bits from the groups of bits are collected for themajority detection process.

Various techniques may be used to apply the majority detection process.The data bits to which the majority detection process is applied may beindividually examined to determine if the individual bit is a one bit ora zero bit with an appropriate ones or zeros counter incremented. Afterall the relevant bits are examined, the count total of the ones andzeros counters can be compared to determine if there is a majority ofones or zeros. Another technique includes comparing a current set ofdata bits with the previous set of data bits to determine whetherapplying the current set to a set of devices would result in a majorityof the devices, which receive the current set data bits, undergoing achange of state from the state set by the previous set of data bits.Another technique includes applying all the relevant bits to one inputof a differential amplifier and applying all the relevant bits invertedto another input of the differential amplifier and examining the outputof the differential amplifier. In an embodiment, all the relevant databits to be examined can be arranged in groups of two or more bits andcompared with the same grouping of all the relevant data bits inverted.The grouping of relevant data bits can be arranged to provide a processfor determining the majority of ones and zeros and at the same time mayreduce the number of devices through which current flows.

At 120, a data bit inversion signal representative of the determinationof a majority is generated. The generation of the data bit inversiondepends on which of the one bits or zero bits are a majority in therelevant data bits to which the majority detection process is appliedand the architecture of the memory device. The data bit inversion signalmay be generated with one of two values, where one value indicatesinversion and the other indicates non-inversion. Alternatively,structures in the memory device may respond to one value and ignoreother values of the data bit inversion signal. In addition, the data bitinversion signal may be configured as a group of signals. The group ofsignals may be generated as one data bit inversion signal for each bitwhere the data bit inversion signal indicates whether the correspondingbit should be inverted or not inverted. In an embodiment, the group ofsignals may be generated as one data bit inversion signal for each bitlocation corresponding to each of the groups in which bits at the bitlocation are serially processed for all the groups. In such a case, thedata bit inversion signal indicates whether, for each of the groups, thei^(th) bit in a group of n bits should be inverted or not inverted. Inan embodiment, a data bit inversion signal is generated as a single databit inversion signal indicating whether or not all the bits representingspecific data to be output should be inverted. All the bits representingspecific data may be one byte of data. The number of bits in a bytedepends on the architectural design of a given memory device. All thebits representing specific data may be one word or multiple words ofdata.

At 130, the data bits, an inversion of the data bits, or a combinationof some of the data bits inverted and the other bits of the data bitsnon-inverted, based on the data bit inversion signal, are provided priorto output of the data from the memory device. These bits may be providedprior to pre-charging operations in the memory device to output the datafrom the memory device.

The location of the data bit inversion in the memory device, based onthe majority determination, may be selected based on the reduction ofpower consumption achievable by the selection. Particular data bits mayundergo data bit inversion such that the conversion to inverted valuesreduces power consumption in subsequent processing of the bits in thememory device. For example, prior to output, the conductive lines onwhich data bits are transferred to output nodes (pins or pads) of thememory device can be pre-charged to a level relative to a referencevoltage such as a supply source in the memory device. With a lineconfigured to pre-charge at a high voltage relative to a lower voltagereference, such as ground, the bit transferred to this line that doesnot require toggling of the pre-charging level can allow an accesstransistor to remain off. The toggling of the pre-charging level mayalso be dependent on the form of drivers following the pre-chargesection of the memory device. For a following driver, after pre-charge,that inverts a signal, a one (high) to an access transistor may turn onthe transistor providing a current path to a reference voltage from asupply source coupled to the data path, which in turn provides a lowinput to the following driver that outputs a high signal, which is aone. In the same architecture, a zero (low) would not turn on the accesstransistor and the following driver would output a low signal, which isa zero. In such an architecture, the majority detection process wouldprovide a data bit inversion signal to invert bits prior to pre-chargingif the data bits examined have a majority of ones such that theinversion causes less access transistors to turn on to pre-charge,reducing the power consumption of the memory device. In an embodiment,the majority detection process in conjunction with data bit inversionmay be realized in, but not limited to, a dynamic random access memory(DRAM).

FIG. 2 shows a block diagram of features of a memory apparatus 200configured with a mechanism to apply a majority detect process and adata bit inversion process to data bits 205 within the memory apparatus200, according to various embodiments of the invention. Memory apparatus200 includes means 210 for applying a majority detect process, whoseresult is used by a means 220 for generating a data bit inversion signal212. The data inversion signal 212 from means 220 for generating a databit inversion signal along with data bits 205 are provided to a means230 for providing the data bits, an inversion of the data bits, or acombination of some of the data bits inverted and the other bits of thedata bits non-inverted. The data bit inversion signal 212 is used bymeans 230 to provide inverted data bits, if any, indicated by the databit inversion signal 212 prior to an output of the memory apparatus.From means 230, based on the data bit inversion signal, the appropriateform of data bits 205 are applied to line 225. Line 225 may be a part ofa datapath on which pre-charging is conducted in memory apparatus 200prior to output of data from memory apparatus 200.

A datapath is defined herein as a transfer path to transfer arepresentation of a data bit directed to be output from a data port ofthe memory apparatus and includes a device for pre-charging the transferpath. A datapath may be coupled directly to a data port, to a driver fora data port, or to a parallel-to-serial converter having multiple inputscoupled to different datapaths and a single output to direct a signal toa data port of a memory apparatus.

The data bits provided by memory apparatus 200 represents data stored instorage cells of memory apparatus 200. The number of data bits used torepresent the data depends on the application and/or architectureassociated with memory apparatus 200. The data may be represented by 8bits, 16 bits, 32 bits, 128 bits, 256 bits, or other number of bits. Thedata may be output from memory apparatus 200 in parallel with each bitof a N bit data representation provided to a different one of the dataoutput nodes (not shown in FIG. 2) of memory apparatus 200. In such anarrangement, N data output nodes are used for memory apparatus 200 toprovide the data bits. Alternatively, the N bits representing data maybe partitioned into M groups of k bits, N=M*k, with k bits in each groupserially output from memory apparatus 200 such that one bit from eachgroup is output in parallel at a different one of the data output nodesof memory apparatus 200. In such an arrangement, M data output nodes areused for memory apparatus 200 to provide the data bits. Otherarchitectures and arrangement of data bits may be used.

Memory apparatus 200 may be arranged to operate in accordance withvarious embodiments including those embodiments discussed above withrespect to FIG. 1. In memory apparatus 200, the data bits operated on bymeans 210 for applying a majority detect process may be the set of bitsrepresenting the data stored in and being processed for output frommemory apparatus 200. Alternatively, in memory apparatus 200, means 210for applying a majority detect process operates on a subset of the bitsrepresenting the data stored in and being processed for output frommemory apparatus 200, where the data is represented by one or more bitsin addition to the subset of data bits. These additional bits may beexcluded from the majority detect process. Since operation of themajority detection process may include additional time in processingdata bits for output after memory apparatus 200 responds to a requestfor data, allowing a number of bits to skip the majority detectionprocess allows the majority detect process to be performed on theremaining bits while these skipped data bits are processed for outputsuch that the majority detect process does not incur a time penalty. Anarchitecture that allows a number of bits to skip the majority detectionprocess may be realized with the data bits arranged in groups of bitsfor readout in a combination of a serial and parallel manner.

Means 210 for applying a majority detect process, means 220 forgenerating a data bit inversion signal, and means 230 for providing thedata bits, an inversion of the data bits, or a combination of some ofthe data bits inverted and the other bits of the data bits non-invertedcan be realized in a number of arrangements. Various embodiments taughtherein include structures that apply a majority detect process, thatgenerate a data bit inversion signal, and that provide data bits, aninversion of the data bits, or a combination of some of the data bitsinverted and the other bits of the data bits non-inverted. Means 210,means 220, and means 230 may be implemented as devices and/or circuitsinterconnected. Means 210, means 220, and means 230 may be implementedas distinct sections of memory apparatus 200 connected via conductivelines or bus structures.

FIG. 3 illustrates features of an apparatus 300 that uses a majoritydetection process, according to various embodiments of the invention.Apparatus 300 includes a majority detection unit 310 configured to applya majority detection process to a subset of the data bits 305, where theset of data bits 305 are provided to driver unit 330. Majority detectionunit 310 may be structured to determine whether a subset of data bits305 have more one bits or more zero bits and to generate a data bitinversion signal 312 representative of the determination. Data bits 305may include a data word representing a data symbol of other specificinformational data. The subset of data bits 305 processed by majoritydetection unit 310 may be the total number of data bits 305 thatrepresent the data or may be less than the total number of data bits 305that represent the data. The data bit inversion signal 312 may begenerated as a single data bit inversion signal for data bits or as aset of data bit inversions signals with each signal correlated to asingle bit or a group of bits within data bits 305.

The data bit inversion signal 312 may be provided from majoritydetection unit 310 to driver unit 330 via line 320. Driver unit 330 isarranged to receive data bits 305 that includes the plurality of databits that were provided to majority detection unit. Driver unit 330operatively provides, based on the data bit inversion signal 312, theplurality of data bits, an inversion of the plurality of data bits, or acombination of some of data bits 305 inverted and the others of databits 305 non-inverted to line 325.

The output of driver unit 330 depends on the architecture and/orapplication of apparatus 300. In an embodiment, driver unit 300 isconfigured to provide data bit inversion to bits of data bits 305 suchthat the conversion of the bit polarity reduces power consumption foroperation of apparatus 300 as compared to other apparatus in similarapplications that do not include an embodiment for a majority detectionprocess and inversion process as disclosed herein. In an embodiment,apparatus 300 includes a memory device in which majority detection unit310 and driver unit 330 are configured such that driver unit 330operatively provides data inversion, based on the data bit inversionsignal 312 from majority detection unit 310, with output to line 325 toa pre-charging unit prior to output of the data from the memory device.

Majority detection unit 310 may be arranged as a plurality of majoritydetectors. Each of these majority detectors may be arranged to operateon a different group of bits in which data bits 305 are arranged as aplurality of groups, where each group has a plurality of bits. Each ofthese majority detectors may be arranged to operate on bits selectedfrom the different groups such that a single bit is selected from eachgroup for the majority detection process in one majority detector.Alternatively, for data bits 305 arranged as a number of groups of bits,majority detection unit 310 may be arranged as a single unit to operateon selected bits from each group in a serial manner such that majoritydetection unit 310 operates on the i^(th) bit of the respective groupsfollowed by operating on the (i+1)^(th) of the respective groups.Operation on bits from each group in a serial fashion may be realizedusing a clocking configuration to provide each group of bits foroperation by majority detection unit 310.

Driver unit 330 may be arranged as a plurality of drivers. Each of thesedrivers may be arranged to operate on a different bit of data bits 305.In an embodiment, the plurality of drivers may include a number ofdrivers arranged to receive bits of data bits 305 that were not alsosent to majority detector unit 310. These drivers, which receive databits that are excluded from the majority detection process, may beconfigured without an input to receive a bit inversion signal 312.Alternatively, these drivers may be configured with an input to receivea bit inversion signal 312, but may also include an enable inputallowing the driver to ignore the data bit inversion signal 312.Alternatively, driver unit 310, arranged as a single unit or a pluralityof drivers, may be arranged to operate on a number of bits. Operation ona number of bits may be realized using a clocking configuration tooperate on one bit in a specified time frame. The inversion operation ofdriver unit 330 or drivers of driver unit 330 may be realized in anumber of different configurations. For example, driver unit 330 mayinclude an arrangement that provides a data bit signal and the data bitsignal inverted to a 2-to-1 multiplexer that has an enable input toselect the input to couple to the single output of the multiplexer. Thedata bit inversion signal may be applied operatively to this enableinput by driver unit 330.

FIG. 4 illustrates features of a memory device 400 that uses a majoritydetection process and data bit inversion process within the memorydevice, according to various embodiments of the invention. Memory device400 includes data sense circuitry 405-1, 405-2 . . . 405-N, a majoritydetection unit 410, a driver unit 430, a datapath unit 425, a data bitinversion node 440, and data output nodes 450-1, 450-2 . . . 450-N.Various embodiments of a memory device that include a majority detectionunit and a driver unit arranged with the majority detection unit, in amanner similar to that shown in FIG. 4, provide a mechanism to save onpower consumption as compared to similar memory devices without themajority detection unit arranged with the driver unit in a similarmanner. The determination of whether data bits from sense amplifiers405-1, 405-2 . . . 405-N have a majority of one bits or zero bits allowsdriver unit 430 to invert (either directly or by selecting) bits forfurther processing, if such an inversion provides that datapath 425consumes less power. Various other components that may form part ofmemory device 400 that are known by those of ordinary skill in the artare not shown in the figure in order to focus on features of the variousembodiments disclosed herein.

Data stored in an array of data storage cells in memory device 400 arestored and read using various commands or combination of commands from acontroller, such as a processor, to memory device 400. These storage andread requests may be processed in a conventional manner. In an operationto access the data in the memory array of memory device 400, data bitsrepresenting the data are read from their storage cells to data sensecircuitry 405-1, 405-2, . . . 405-N. Data sense circuitry 405-1, 405-2,. . . 405-N may include data sense amplifiers. The number of data bitsrepresenting the data may be equal to the number of data sense circuitssuch that each data bit is directed to a different data sense circuitry405-1, 405-2 . . . 405-N. Depending on the application and/orarchitecture, data may be represented by a word having N binary databits, “1” or “0”. N can be any number such as, 8, 16, 32, 128, 256, orsome other number.

In an embodiment, each bit is provided by its corresponding data sensecircuitry 405-1, 405-2 . . . 405-N to majority detection unit 410substantially concurrently in parallel on N lines. Majority detectionunit 410 determines whether these data bits have more one bits or morezero bits. Based on this determination, majority detection unit 410generates a data bit inversion signal at 420, which is coupled to databit inversion node 440 and to driver unit 430. Data bit inversion node440 includes an output pad or pin that may be coupled to another devicesuch as a controller to transmit the data bit inversion signalexternally from memory device 400 to the other device. The occurrence ofthe data bit inversion signal 412 at data bit inversion node 440provides a mechanism to indicate to external circuitry whether or notthe data being transferred from data output nodes 450-1, 450-2 . . .450-N is an inverted or non-inverted representation of the data beingoutput. Data bit inversion signal 412 may be provided as a high or lowsignal to represent inversion or non-inversion depending on a particulararchitecture being implemented.

Driver unit 430 receives the data bit inversion signal 412 from node 420and the data bits from data sense circuitry 405-1, 405-2 . . . 405-N.Depending on the state of the data bit inversion signal 412, driver unit430 inverts the data bits received from data sense circuitry 405-1,405-2, . . . 405-N. The inversion can be performed to allow memorydevice 400 to reduce power consumption during further processing of thedata prior to output at data output nodes 450-1, 450-2 . . . 450-N.Depending on the architecture, driver unit 430 inverts the data bits ifthere is a majority of one bits and the further processing of one bitsuses more power than processing zero bits if the zero bits are in amajority. Alternatively for another architecture, driver unit 430inverts the data bits if there is a majority of zero bits and thefurther processing of zero bits uses more power than processing onesbits if the ones bits are in a majority. Inversion by driver unit 430may include selection of an inverted version of the data bits presentedto driver unit 430. In an embodiment, driver unit 430 may be structuredas a plurality of drivers 430-1, 430-2 . . . 430-N. The number ofdrivers may be in a one-to-one correspondence with the number of datasense circuitry.

In an embodiment, drivers 430-1, 430-2 . . . 430-N provide the data bitsor an inversion of the data bits to datapath unit 425 for pre-chargingprior to output at data output nodes 450-1, 450-2 . . . 450-N. Datapathunit 425 may be configured as a plurality of datapaths 425-1, 425-2 . .. 425-N for pre-charging a line for each data line. The number ofdatapaths of datapath unit 425 may be in a one-to-one correspondencewith the number of drivers of driver unit 430. From datapaths 425-1,425-2 . . . 425-N, data bits or inverted data bits are provided at dataoutput nodes 450-1, 450-2 . . . 450-N for use by external devices.

FIG. 5 illustrates an embodiment of a driver 500 that may be implementedin the memory device of FIG. 4. Driver 500 includes a 2-to-1 multiplexer532 having a control (enable) input 531, an inverter 534, and atransistor 536. A data bit signal and an inverted data bit signal,provided by inverter 534, are input to 2-to-1 multiplexer 532. A databit inversion signal 512 is operatively provided to 2-to-1 multiplexerto select either the data bit signal or the inverted data bit signal,depending on the state of data bit inversion signal 512. The singleoutput from 2-to-1 multiplexer 532 provides the data bit signal or theinverted data bit signal for further processing such as at datapath unit425 of FIG. 4.

FIG. 6 illustrates an embodiment of a datapath 600 that may beimplemented in the memory device of FIG. 4 in conjunction with a driversuch as illustrated in FIG. 5. Datapath 600 is coupled to driver 630 toreceive a signal from output transistor 636. Datapath 600 includestransistor 626 coupled to supply voltage V_(cc) and to output 629.Output 629 may be coupled to a data output node such as one of 450-1,450-2 . . . 450-N, such as through a driver of a data output node, or toanother internal component of memory device 400. In an embodiment,output 629 may be coupled to a driver 651 of a data output node thatoperatively inverts the signal present at node 629. Datapath 600includes a precharge enable 628 to turn on transistor 626. Prechargeenable 628 may be coupled to a constant voltage or a gated voltagedepending on the application.

With a zero (low) input to transistor 636 and transistor 626 on,transistor 636 is off with no current flow from the supply V_(cc)through transistor 636, and the output at 629 is high. With the output629 coupled to inverting driver 651 for a data output node, a zero isprovided at the data output node, such as one of 450-1, 450-2 . . .450-N. Signals can be timed such that transistor 626 turns off beforethe input to transistor 636 goes high. The output at 629 is low. Withthe output 629 coupled to inverting driver 651 for a data output node, aone is provided at the data output node. With a plurality of datapaths,each such as depicted in FIG. 6, and a plurality of drivers, each suchas depicted in FIG. 5, used in conjunction with the majority detectionunit of FIG. 4, the majority detection unit can be configured to providea data bit inversion unit signal such that the majority of thetransistors 636 of the plurality of drivers 630 receive a low signal attheir respective gates such that the transistors are in an off state.Some architectures may represent a zero with a high voltage valuerelative to the voltage value of a one. In such cases, the componentsdiscussed relative to FIGS. 4-6 may be configured to adjust for such adesign.

A majority detection unit for implementation in a memory device, such asthat of FIG. 4, or for implementation in other devices having changingstates according to groups of values may be configured in variousmanners. FIG. 7 shows a block diagram of features of an embodiment of amajority detection unit 700, according to various embodiments of theinvention. Majority detection unit 700 includes evaluation unit 705 andevaluation unit 715, where each is coupled to comparison unit 725.

Evaluation unit 705 includes a plurality of input nodes 707 to receive aplurality of data values D<0:N>, where each data value is operativelyprovided to a different one of the input nodes 707, and an output node709. In various embodiments, a data value may be a one bit or a zerobit. In other embodiments, each data value may represent one of a set ofvalues. Evaluation unit 705 includes a number of legs 711-1 . . . 711-M,where each leg has a number of access devices 713-1 . . . 713-1 . . .713-k . . . 713-N. Each access device 713-1 . . . 713-1 . . . 713-k . .. and 713-N has a control terminal coupled to a different one of theinput nodes to receive a data value D<j>. Legs 711-1 . . . 711-M arearranged in parallel with each other. Each leg 711-1 . . . 711-M iscoupled to a reference device 706 that provides access to supply voltageV_(cc). The other end of each leg 711-1 . . . 711-M is coupled toanother voltage reference source, such as ground. The number of accessdevices in each leg 711-1 . . . 711-M is greater than or equal to two.

Evaluation unit 715 includes a plurality of input nodes 717 to receivethe plurality of data values inverted, D′<0:N>, where each inverted datavalue is operatively provided to a different one of the input nodes 717,and an output node 719. Evaluation unit 715 includes a number of legs721-1 . . . 721-M, where each leg has a number of access devices 723-1 .. . 723-I . . . 723-k . . . 723-N. Each access device 723-1 . . . 723-I. . . 723-k . . . and 723-N has a control terminal coupled to adifferent one of the input nodes to receive an inverted data valueD′<j>. Legs 721-1 . . . 721-M are arranged in parallel with each other.Each leg 721-1 . . . 721-M is coupled to a reference device 716 thatprovides access to supply voltage V_(cc). The other end of each leg721-1 . . . 721-M is coupled to another voltage reference source, suchas ground. The number of access devices in each leg 721-1 . . . 721-M isgreater than or equal to two.

The access devices in evaluation unit 705 and evaluation unit 715 may berealized in a number of ways. The access devices may include atransistor having a gate as a control terminal. The access devices mayinclude a transistor circuit using one or more inputs to one or morebase nodes of transistors as a control terminal. The access devices mayinclude a logic circuit having a pass gate arranged as a controlelement. The access device may be selected based on the architecture forthe device in which majority detection unit 700 is constructed such thatthe input values applied to the access devices are used to allow or toprevent current in the corresponding leg of the evaluation unitdepending on the value input the access device.

Comparison unit 725 is coupled to both outputs 709 and 710 to compareresults of an evaluation of the data values and the data values invertedin a similar configuration. The output from comparison unit 725 may beused as a data value inversion signal representative of whether the datahas a majority of one type of value or another. The configuration ofmajority detection unit 700 allows a determination of the majority valuetype in N data values such that at most M current paths are in aconducting state when the data values are all of one type.

FIG. 8 shows a block diagram of features of a majority detector 800 thatmay be implemented in conjunction with various structures and methods,such as shown in FIGS. 1-6, according to various embodiments of theinvention. Majority detector 800 is coupled to data sense amplifiers 805to operatively receive N data bits. Data sense amplifiers 805 includemultiple sense amplifies with each sense amplifier operable on adifferent one of the N data bits. The N data bits are provided tomajority detector 800 via N lines at a plurality of inputs 806 alsoreferenced as D<0:N−1>. This nomenclature follows a common usage ofdesignating the first bit as the 0^(th) bit. The N data bits invertedare provided to majority detector 800 via N lines at a plurality ofinputs 807 also referenced as D′<0:N−1>. The value of N depends on theembodiment and may be equal to 8, 16, 32, 64, 128, 256 or some othernumbers divisible by two. Majority detector 800 provides a data bitinversion signal at DBI (data bit inversion) node 820.

The operation of majority detector 800 may be performed in conjunctionwith a clock signal, CLKDSA (clock data sense amplifier), that isprovided to data sense amplifiers 805. In operations of the embodimentshown in FIG. 8, if the number of data ones is greater than the numberof data zeros, then the DBI signal at node 820 will be low ortransitions low. If the number of data ones is less than the number ofdata zeros, then the DBI signal at node 820 will be high or transitionshigh. If the number of data ones equals the number of data zeros, thenthe DBI signal at node 820 may be a level indicative of a “do not care”state. Depending on the architecture, an equal number of data ones anddata zeros may result in selection of the DBI signal as a low or as ahigh. In some embodiments, such a “do not care” state may be furthermodified following majority detector 800. The modification may depend onthe location at which majority detector 800 is constructed in thememory. Other embodiments may provide for the DBI signal to be low for amajority of zero bits and high for a majority of one bits.

Majority detector 800 is arranged with two units 830 and 840 to evaluatewhether the N data bits have more one data bits or more zero data bits.Unit 840 may be formed in substantially the same manner as unit 830except that data bits D<0:N−1> are operatively provided to unit 830 frominput nodes 806 and inverted data bits D′<0:N−1> are operativelyprovided to unit 840 from input nodes 807. Other designs may include thedata bits inverted within majority detector 800 rather than havinginverted data bits provided to majority detector 800.

Unit 830 includes a number of legs 832-1 . . . 832-M, where M=N/2. Eachleg 832-1 . . . and 832-M has two transistors arranged in series betweenan output node 835 of unit 830 and a reference, such as ground. Eachtransistor, 834-1, 834-2, . . . 834-(N−1), 834-N, is operatively coupledto a different one of the input nodes 806 to receive a different one ofthe data bits D<i>. Each leg is in parallel with each of the other legsand in parallel with a bias transistor 836 whose gate receives an enablesignal EN from a supply voltage V_(cc) such that bias transistor 836 isactivated when the majority detection process is initiated andperformed. Legs 832-1 . . . 832-M and bias transistor 836 are coupledeffectively at node 835 to an enable transistor 838 that has a gatecoupled to input 808, ENF. A clock signal may be provided at ENF suchthat the majority detection process is activated at select time periodswith no power being consumed when the majority detection process is notbeing performed. Enable transistor 838 is also coupled to supply voltageV_(cc).

Unit 840 includes a number of legs 842-1 . . . 842-M, where M=N/2. Eachleg 842-1 . . . and 842-M has two transistors arranged in series betweenan output node 845 of unit 840 and a reference, such as ground. Eachtransistor, 844-1, 844-2, . . . 844-(N−1), 844-N, is operatively coupledto a different one of the input nodes 807 to receive a different one ofthe inverted data bits D′<i>. Each leg is in parallel with each of theother legs and in parallel with a bias transistor 846 whose gatereceives enable signal EN from a supply voltage V_(cc) such that biastransistor 846 is activated when the majority detection process isinitiated and performed. Legs 842-1 . . . 842-M and bias transistor 846are coupled effectively at node 845 to an enable transistor 848 that hasa gate coupled to input 808, ENF. A clock signal may be provided at ENFsuch that the majority detection process is activated at select timeperiods with no power being consumed when the majority detection processis not being performed. Enable transistor 848 is also coupled to supplyvoltage V_(cc).

Output 835 of unit 830 is coupled to amplifier 850 at input node 851 andoutput 845 of unit 840 is coupled to amplifier 850 at input node 852. Inan embodiment, input node 851 is referenced as a negative input andinput node 852 is referenced as a positive input. Amplifier 850 is alsocoupled to control transistor 853, whose gate is operatively coupled toa clock signal, and to control transistor 854, whose gate is operativelycoupled to a clock signal. Amplifier 850 has an output coupled to DBInode 820 to provide a DBI signal.

In a memory in which a majority detector, such as majority detector 800,is structured, a request for data stored in memory cells of one or morememory arrays of the memory are supplied by the memory using timingsignals. Data sense amplifiers 805 receive CLKDSA to provide the timingwaveforms for operation of these amplifiers on the N data bits providedfrom the memory array(s). Clock signal CLKDSA may also be used tocontrol the timing of the performance of a majority detection process onthe data bits received by data sense amplifiers 805 prior to output ofthese bits from the memory. Since the operation by data sense amplifiers805 on the N data bits occurs over a time period, to operate majoritydetector 800 with the data bits that are provided, the clocks used bymajority detector 800 may be a delayed version of CLKDSA correlated tothe processing time of data sense amplifiers 805. Delay unit 815 may beprovided to provide a set of delayed versions of CLKDSA. Clock signalCLKDSADF may be provided from delay unit 815 to input 808 as ENF for useby units 830 and 840. ENF is used to control enable transistor 838 andenable transistor 848 such that current flows in bias transistor 836 andbias transistor 846 only during operation of the majority detectionprocess. In operation, control transistors 853 and 854 may be controlledwith control signals separate from the clocks for units 830 and 840. Theclocks signals for control transistors 853 and 854 may be provided suchthat these control transistors may be activated prior to the N data bitsbeing provided to majority detector 800. Delay unit may provide signalsCLKDSADDF and CLKDSADD for use by control transistors 853 and 854,respectively. In an embodiment, CLKDSADDF and CLKDSADD may be the samesignal. The clock signals used may be timing waveforms correlated todata commands or data requests rather than continuously running periodicsignals.

Delay unit 815 may be arranged as a number of delay elements such thatdifferent timing signals may be generated from delay unit 815 by tappingdifferent delay elements. The delay elements may be a series ofinverters, logic devices, or other devices to delay a signal withoutsubstantially altering the waveform of the signal.

In operation, with respect to power use of majority detector 800, theworst case occurs when the N data bits are all zeros or all ones. Insuch a case, there are M=N/2 legs in only one of units 830 and 840 on,with all the legs in the other unit are off. With N=32 and M=16, thereare 16 legs on to evaluate 32 bits. For N=32 with 15 bits of one type (0or 1) and 17 bits of the other type, the worst case is that 15 legs areon, while the best case is that 1 leg is on. Thus, majority detector 800provides a low power majority detection process since, to evaluate Nbits, the maximum number of legs that are on for the evaluation is N/2.

The range of voltage swings in the operation of majority detector 800can be controlled by the on-resistances RP of enable transistors 838 and848 and the on-resistances RN of bias transistors 836 and 846, whereselection of the appropriate value for RP and RN clamp the maximumvoltage, Vmax. The on-resistances of each leg 832-i and 842-i may be setsubstantially to the same resistance value R. The on-resistances of eachleg 832-i and 842-i may be arranged with known values of resistance foreach leg selected, in design, individually for each leg. The arrangementmay be a weighted resistance correlated to the index of the leg. Theseon-resistances may be determined by the parameters for the transistorsused for majority detector 800 when constructing majority detector 800on the integrated circuit (chip) with the other components of the memoryin which it is structured.

The speed of the majority detect circuit is determined by the case whenthe number of ones is one more or one less than the number of zeros. Inthis case, ΔV, ΔV=(+)voltage at node 851 minus (−)voltage at node 852,is (Vmax−Vmin)/M. For 32 data bits, the number of legs is 16 so thatwhen evaluating 32 data bits, the number of voltage steps between (+)and (−) is 16. For the evaluation of N data bits, the number of voltagesteps between (+) and (−) is N/2=M. Majority detector 800 may provide alow power, high speed process for majority detection within a memorythat can be applied to operations on data bits within the memory priorto output of these data bits from the memory. Such a process may beprovided to these data bits prior to pre-charging for output from thememory. In an embodiment, the memory may be realized as, but is notlimited to, a DRAM.

A majority detection process applied to a set of data bits may increasethe time to process these data bits from a memory. In variousembodiments, a majority detection process may be applied in which theprocess does not substantially impact the timing of the output of thedata bits after a request for the data has been received by the memory.In an architecture in which a number of bits in a group of bits areknown to be output first prior to the output of the remaining bits ofthe group, these number of bits may be routed to skip the majoritydetection process. Thus, during the time period that these bits,excluded from the majority detection, are being output, the majoritydetection process may be applied to the remaining bits of the group suchthat these remaining data bits are provided for output at substantiallythe same time that they would be output without undergoing the majoritydetection process. If two bits are skipped and a majority detectionprocess is implemented, then each group of bits, which may be referredto as a burst, has four or more bits in some embodiments.

In an embodiment, an array of data storage cells of a memory is arrangedsuch that data is output as data bits from the array, where the databits are arranged as a plurality of groups of bits. Each group of bitshas the same number of bits such that the bits from the group arearranged to be in a common number of effective bit locations. Dataoutput nodes of the memory to output the data from the memory device arearranged such that each data output node is correlated to a differentone of the groups of bits. For example, 50 bits may be arranged as fivegroups of 10 bits where each of the 10 bits is identified with a bitlocation i, 0≦i≦9. Each of the five groups may be assigned to adifferent one of five data output nodes of the memory. Since one grouphaving 10 bits is assigned to one of the five data output node, thesebits are output serially with bit location 0 sent first and bit location9 sent last. The common bit locations at each of the five data outputnodes are output at substantially the same time.

A majority detection unit may be configured to apply a majoritydetection process to determine whether the data bits corresponding to acommon bit location of the groups of bits have more one bits or morezero bits for each common bit location and to generate a data bitinversion signal representative of the determination for each common bitlocation. The majority detection unit may be configured to operativelyskip the majority detection process for a number of common bit locationsof each group. This exclusion may be realized with the majoritydetection unit configured without a connective line to receive bits atthe bit locations designed for skipping the majority detection process.The majority detection unit may include inputs that allow the selectionof the bit locations to be processed or not processed based on an enableinput. The majority selection unit may be arranged as a plurality ofmajority detectors such that each majority detector operates only on thecommon bit locations of the groups into which the data is partitioned.

The data bit inversion signal may be generated as a plurality of databit inversion signals. Alternatively, the data bit inversion signal maybe generated as a time multiplexed data bit inversion signal with eachtime unit corresponding to the bit location subjected to the majoritydetection process. The data bit inversion signal, in the format of theparticular architecture, can be provided to a driver to further processthe data bits for output from the memory.

The driver unit may be arranged to receive each group of data bits andthe data bit inversion signal corresponding to each common bit locationgroup and to operatively provide, based on the data bit inversionsignal, each data bit of each group or an inversion of each data bitprior to output of the data from the memory device. Inverted data bitsmay be provided to the driver unit or the driver unit may be configuredto invert data bits that it receives. Bits from the driver unit may beprovided to a pre-charging unit prior to output of the data from thememory device. The driver unit may be arranged as a plurality ofdrivers, one for each data bit, that are grouped according to the groupsof data bits with each group of drivers corresponding to a different oneof the data output nodes of the memory. For each data output node, aparallel-to-serial converter may be arranged to receive bits of onegroup of bits processed by one group of drivers for serial output asdiscussed above.

FIG. 9A shows a block diagram illustrating features of a memory device900 that includes a majority detection process in which a number of bitsfrom a group of data bits are excluded from the majority detectionprocess, according to various embodiments of the invention. Memorydevice 900 includes a plurality of data output nodes. Associated witheach data output node is a plurality of data sense amplifiers, aplurality of drivers, a plurality of datapaths, and a parallel-to-serialconverter. To more clearly focus on the features of a memory having amajority detection process in which a subset of data bits are excludedfrom the majority detection process, as described herein, only one ofthe data output nodes and its associated group of structures is shown.

In an embodiment, data is represented by N bits partitioned into Mgroups with K bits per group in which L bits of each group are excludedfrom the majority detection process and the remaining K-L bits, a subsetof the K bits, undergoes a majority detection process. Each of the K-Lbits is bit-wise subjected to the majority detection process inconjunction with corresponding bits from the other groups. Relative toone data output node, each bit of its corresponding group is at a bitlocation of the group of bits. FIG. 9A illustrates an architecture inwhich data is represented by 128 bits partitioned into 16 groups, eachgroup is assigned to a data output node and has eight bits in which thefirst two bits, effectively at the first two bit locations, are skippedin a majority detection process on each group. Alternatively, the bitsfor skipping may vary in number and be located at effective bitlocations other than the 1^(st) and 2^(nd) bit position.

Data output node, DQ0, 950 serially outputs 8 bits that are operativelyprovided by parallel-to-serial converter 955 in which the 1^(st) and2^(nd) bits skip the majority detection process and the 3^(rd)-the8^(th) bits are processed by majority detection unit 910. The 8 bits forthe DQ0 group, output form the memories' storage cells, are amplified bythe 8 data sense amplifiers (DSAs) 905 and provided to the 8 drivers 930in a one-to-one correspondence. A subset of the 8 data bits, 6 innumber, is provided to majority detection unit 910. These 6 data bitsmay also be accompanied by the inversion each of these 6 data bits.Alternately, the 6 data bits may be inverted in majority detection unit910.

Majority detection unit 910 also receives 6 bits from each of the other15 groups assigned to the 15 other DQs. Each of the bits from the 16groups is assigned to a bit location such that majority detection unit910 operates on the bits from the groups at a common location. Majoritydetection unit 910 operates on the 3^(rd) bit from each of the 16 groupsto generate to the 3^(rd) driver of the drivers 930 adatainvert_(—)3^(rd) signal (data bit inversion signal) indicative ofthe result of the majority detection process for the 3^(rd) bits, or bitlocations, of the 16 groups. The datainvert_(—)3^(rd) signal indicatesto the 3^(rd) driver for DQ0 whether the data bit or the data bitinverted is to be provided to the 3^(rd) datapath of datapaths 925 forpre-charge prior to output from DQ0 of the memory. Thedatainvert_(—)3^(rd) signal is also provided to the 3^(rd) driver foreach of DQ1-DQ15. Each of the other bit locations, 4^(th)-8^(th), isprocessed in a similar manner as for the 3^(rd) bit with generation ofdatainvert_(—)4^(th) signal-datainvert_(—)8^(th) signal to provide theresults of these 6 majority detection operations. Majority detectionunit 910 may be configured as 6 majority detectors, one for each bitlocation, 3^(rd)-8^(th). A majority detector may be arranged to operateon the relevant subset of data bits in a manner similar to thatdiscussed in FIGS. 7 and 8. Majority detection unit 910 may beconfigured as one majority detector such that bits from one bit locationfrom each bit locations, 3^(rd)-8^(th), are operated on in a serialfashion. In an embodiment, majority detection unit 910 does not providethe first and second drivers of drivers 930 with a datainvert signal,since the 1^(st) and 2^(nd) bit are processed from the 1^(st) and 2^(nd)DSA of DSAs 905 to the 1^(st) and 2^(nd) datapaths of datapaths 925skipping the majority detection process.

Parallel-to-serial converter 955 receives the 8 bits for output from DQ0950. The 1^(st) bit is provided to DQ0 first followed by the2^(nd)-8^(th) bit. Each bit, j^(th), 1≦j≦8 is output from DQ0concurrently with the j^(th) bit of each of DQ1-DQ15. Each group of 16bits that corresponds to the 3^(rd) to the 8^(th) bit location may beoutput in an inversion state (inverted or non-inverted) corresponding tothe majority detection process for the respective bit location. Forexample, the 16 bits from the 3^(rd) bit location may be inverted whilethe 16 bits of the 4^(th) bit location are not inverted. For use of thedata by a device coupled to memory device 900, the inversion status ofthe 16 bits for the 3^(rd)-8^(th) bit locations should be provided tothe other device.

The inversion status from memory device 900 is provided at the DBI node940 with the status for each bit location provided in a serial mannercorrelated to the output of the 16 bits of the same bit locations. Inaddition to providing datainvert_(—)3^(rd)-datinvert_(—)8^(th) for thecorresponding drivers of each DQ output node, majority detection unitprovides these data inversion signals to parallel-to-serial converter945 for serial output at DBI node 940. Allowing the first two bits foreach DQ output node to skip the majority detect circuitry eliminates aspeed penalty that may occur with conducting a majority detectionprocess of data bits prior to output from the memory. This exclusionprocess provides time to perform the analysis of the 3^(rd)-8^(th) bitsbefore these bits are to be at their appropriate DQ output node.

The bit exclusion architecture for a memory having a majority detectionprocess is not limited to data represented by 128 bits in 16 groups of 8bits with the first two bits of each bit being the excluded bits. Datamay be represented by N bits in M groups of K bits, where L bits in eachgroup are excluded from the majority detection process. The selection ofthe values for N, M, K, and L depend on the embodiment implemented. Inan embodiment, memory device 900 may be realized as, but not limited to,a DRAM.

FIG. 9B shows a block diagram illustrating features of a memory device960 that includes a majority detection process in which a number of bitsfrom a group of data bits are excluded from the majority detectionprocess, according to various embodiments. Memory device 960 may beconfigured to output 2N bits, where N bits 972 are stored in array A 970and N bits 973 are stored in array B 975. N bits 972 from array 970 maybe provided to output circuitry 990 together without being in aparticular order. N bits 973 from array 975 or N bits 973 from array 975inverted may be provided to output circuitry 990 together as N bits 974.N bits 972 are excluded from a majority detection process, while amajority detection process is applied to N bits 973. N bits 973 need notbe provided from array 975 in a particular order.

Data bit inversion (DBI) unit 980 includes drivers 988 and a majoritydetection unit 984 to operate on N bits 973. If it is determined byoperation of majority detection unit 984 that N bits 973 should beinverted, N bits 974 are provided to output circuitry 990 as an invertedversion of N bits 973. If it is determined by operation of majoritydetection unit 984 that N bits 973 should not be inverted, N bits 973are provided to output circuitry 990 as N bits 974. With the majoritydetection process and possible inversion operation, a DBI signal 992indicative of the state of N bits 974 is provided by DBI unit 980 tooutput circuitry 990.

On a read command to fetch 2N bits, N bits 972 from array 970 and N bits973 from array 975 are fetched. With memory array 975 physically locatedcloser to output circuitry 990 than memory array 970, N bits 973, if notprocessed through DBI unit 980, would arrive sooner at output circuitry990 than N bits 972. This time difference allows N bits 973 to beprocessed by DBI unit 980 such that N bits 974 arrive at outputcircuitry 990 with N bits 972 for N bits 974 and N bits 972 to be outputat the same time by output circuitry 990. Memory device 960 may includememory cell arrays in addition to array 970 and array 975 on a commonintegrated circuit chip. The bits may be fetched from other memoryarrays of memory device 960. Memory device 960 is not limited tofetching an equal number of bits when accessing two or more memoryarrays. The 2N bits may be distributed as M+K bits, where M does notequal K.

Various embodiments of structures, as illustrated in FIGS. 2-9B but notlimited by these figures, can be constructed in memory devices inintegrated circuits using conventional techniques. Various processtechniques applied to memory types, which include DRAMs, static randomaccess memory (SRAM), synchronous dynamic random access memory (SDRAM),synchronous graphics random access memory (SGRAM), double data ratedynamic ram (DDR), and double data rate (SDRAM), may be employed tofabricate various embodiments for memories as taught herein. Structuresof various embodiments may be realized in simulation packages that maybe arranged as software, hardware, or a combination of software andhardware packages to simulate various embodiments and/or the operationof various embodiments.

FIG. 10 shows a block diagram of various features of an electronicsystem 1000, according to various embodiments of the invention.Electronic system 1000 may be formed in various manners coupling theindividual components of electronic system 1000 together or integratingthe components into one or a number of units using conventionaltechniques. Electronic system 1000 may include one or more memorydevices 1002 coupled to a processor 1004. Memory devices 1002 can bearranged as a number of packaged integrated circuits. Memory devices1002 may be formed on a substrate 1003. Substrate 1003 may comprisematerial used in forming a memory device using conventionalsemiconductor processing techniques. Memory device 1002 includes aplurality of memory cells that are generally arranged in rows andcolumns in one or more memory arrays of memory cells 1006. Memory device1002 may also include a row decoder 1008 and a column decoder 1010. Rowdecoder 1008 operates in combination with a row address buffer 1014 toreceive address signals on an address bus 1016 coupled to processor1004. Accordingly, the address signals received by row decoder 1008 androw address buffer 1014 are operable to direct the memory device 1002 toone or more rows in the array 1006. Similarly, a column address buffer1018 may be provided that operates in combination with column decoder1010 to receive the address signals on address bus 1016, so that memorydevice 1002 may be directed to one or more columns in array 1006.

Electronic system 1000 may also include a control unit 1020, which isoperable to receive control signals on a control/timing bus 1022, and tointerpret various memory access requests. Once memory device 1002 isaccessed by receiving suitable control and address signals fromprocessor 1004, data may be communicated to or from memory device 1002on a data bus 1024, which is coupled to a data input/output unit 1026.Data input/output unit 1026 is operable to read or write the data toarray 1006 in combination with a sense amplifier 1012. Data input/outputunit 1026 may include one or more embodiments for a majority detectionunit 1027 and driver unit 1029 that operate in conjunction with senseamplifier 1012 to realize a data bit inversion process within memorydevice prior to output of data on data lines D0-Dy.

FIG. 11 shows a block diagram of a system 1100 having a controller 1105and a memory 1125 including one or more embodiments for a majoritydetection unit 1127 and driver unit 1129 that operate to realize a databit inversion process within memory 1125 prior to output of data,according to various embodiments of the invention. System 1100 may beformed in various manners coupling the individual components of system1100 together or integrating the components into one or a number ofunits using conventional techniques. In an embodiment, system 1100 alsoincludes an electronic apparatus 1135 and a bus 1115, where bus 1115provides electrical conductivity between controller 1105 and electronicapparatus 1135 and between controller 1105 and memory 1125. In anembodiment, bus 1115 includes an address bus, a data bus, and a controlbus, each independently configured. In an alternative embodiment, bus1115 uses common conductive lines for providing one or more of address,data, or control, the use of which is regulated by controller 1105. Inan embodiment, electronic apparatus 1135 includes additional memoryconfigured in a manner including an embodiment for a majority detectionunit and drivers that operate on data bits to realize a data bitinversion process within such a memory, prior to an output from thememory that includes the data bits, the data bits inverted, or acombination of some of the data bits and others of the data bitsinverted. In an embodiment, additional peripheral device or devices 1145are coupled to bus 1115. In various embodiments, peripheral devices 1145include displays, imaging devices, printing devices, wireless devices,additional storage memory, control devices that may operate inconjunction with controller 1105. In various embodiments, controller1105 is a processor. In an embodiment, system 1100 includes, but is notlimited to, fiber optic systems or devices, electro-optic systems ordevices, optical systems or devices, imaging systems or devices, andinformation handling systems or devices such as wireless systems ordevices, telecommunication systems or devices, and computers.

FIG. 12 shows features of a method that includes forming an apparatushaving a memory device with a majority detection process for possibledata bit inversion of bits representing data prior to output of the datafrom the memory device, according to various embodiments of theinvention. At 1210, a memory array of memory cells is provided on asubstrate for a memory device. The memory array may be configured tooperatively store data and output the data represented as data bits.

At 1220, a majority detection unit may be arranged on the substrate,where the majority detection unit may be configured to operativelydetermine whether a plurality of the data bits have more one bits ormore zero bits and to operatively generate a data bit inversion signalrepresentative of the determination. The plurality of data bits may be asubset of the data bits representing the data. The construction of theapparatus may include coupling data sense amplifiers to the majoritydetection unit to operatively provide the plurality of data bits to themajority detection unit. The method may include providing the majoritydetection unit with an input to receive an enable signal to conduct amajority detection operation such that the enable signal is operativelycorrelated to a clock signal coupled to the data sense amplifiers. Themethod may also include providing a delay unit arranged to operativelyreceive the clock signal coupled to the data sense amplifiers and tooperatively provide the enable signal to the majority detector as adelayed version of the clock signal coupled to the data senseamplifiers.

The majority detection unit may be formed including forming a firstevaluation unit arranged to receive the plurality of data bits, forminga second evaluation arranged to receive the plurality of data bitsinverted, and forming a comparison unit coupled to an output of thefirst evaluation unit and coupled to an output of the second evaluationunit. The comparison unit may be formed having an output to operativelyprovide the data bit inversion signal to other components of the memorydevice and for transfer from the memory device to circuits external tothe memory device.

At 1230, a driver unit may formed as an arrangement to operativelyreceive the plurality of data bits, to operatively receive the data bitinversion signal from the majority detection unit, and to operativelyprovide, based on the data bit inversion signal, the plurality of databits or an inversion of the data bits prior to output of the data fromthe memory device. The driver unit may be arranged to provide therelevant data bits in an appropriate inverted or non-inverted formatprior to a pre-charging unit before output of the data from the memorydevice. The construction of the apparatus may include coupling the datasense amplifiers to the driver unit to operatively provide the pluralityof data bits to the driver unit in addition to providing these data bitsto the majority detection unit.

The driver unit may be formed as a plurality of drivers coupled to apre-charging unit. The pre-charging unit may be constructed having aplurality of datapaths, where each datapath is formed having aconductive line and a device to couple the conductive line to areference voltage to pre-charge the conductive line. The drivers and thedatapaths may be formed such that there is a one-to-one correspondencebetween the drivers and the datapaths. The drivers and the datapaths mayalso be formed in a one-to-one correspondence with data senseamplifiers.

The memory device may be formed having an architectural structure suchthat the bits representing the data are all subjected to the majoritydetection process conducted by the majority detection unit.Alternatively, memory device may be formed having an architecturalstructure such that the bits representing the data includes one or morebits in addition to a plurality of data bits that are subjected to themajority detection process conducted by the majority detection unit suchthat the one or more bits are excluded from operation of the majoritydetection unit.

In various embodiment, a method for forming a memory device with amajority detection process for possible data bit inversion of bitsrepresenting data prior to output the data from a memory device,according to various embodiments may include coupling the memory deviceto other units to form a system. The memory device may be coupled to aprocessor in a system. The construction of a system may include, but isnot limited to, forming fiber optic systems or devices, formingelectro-optic systems or devices, forming optical systems or devices,forming imaging systems or devices, and forming information handlingsystems or devices such as wireless systems or devices,telecommunication systems or devices, and computers.

FIG. 13 shows features of a method that includes forming an apparatus toprovide a signal indicative of a majority of a value in a group ofpossible values, according to various embodiments of the invention. Inan embodiment, an apparatus is formed including a structure tooperatively provide a signal indicative of a majority of ones or zerosin data bits examined. At 1310, a first evaluation unit is formed. At1314, a plurality of input nodes for the first evaluation unit is formedsuch that each input node is configured to operatively receive adifferent one of a plurality of data bits.

At 1318, a number of legs for the first evaluation unit is formed suchthat each leg has a number of access devices with a control terminal ofeach access device coupled to a different one of the input nodes. Thelegs are arranged in parallel with each of the other legs. The number ofaccess devices in each leg of the first evaluation unit formed isgreater than or equal to two. In an embodiment, a method includesstructuring the apparatus such that the plurality of data bits is equalto the multiplicative product of the number of legs and the number ofaccess devices for each leg for the first evaluation unit. In anembodiment, a method includes forming the access devices of the firstevaluation unit to include transistors with the number of access devicesin each leg of the first evaluation unit equal to two and forming thecontrol terminal of each access device as a transistor gate such thatthe two transistors in each leg of the first evaluation unit arearranged in series.

At 1320, a second evaluation unit is formed. At 1324, a plurality ofinput nodes for the second evaluation unit is formed such that the inputnodes are configured to operatively receive the plurality of data bitsinverted. Each input node of the second evaluation unit is coupled tooperatively receive a different one of the inverted data bits. At 1328,a number of legs for the second evaluation unit is formed such that eachleg has a number of access devices with a control terminal of eachaccess device coupled to a different one of the input nodes of thesecond evaluation unit. The legs are arranged in parallel with each ofthe other legs. The number of access devices in each leg of the secondevaluation unit formed is greater than or equal to two. In anembodiment, a method includes structuring the apparatus such that theplurality of data bits inverted is equal to the multiplicative productof the number of legs and the number of access devices for each leg forthe second evaluation unit. In an embodiment, a method includes formingthe access devices of the second evaluation unit to include transistorswith the number of access devices in each leg of the second evaluationunit equal to two and forming the control terminal of each access deviceas a transistor gate such that the two transistors in each leg of thesecond evaluation unit are arranged in series.

At 1330, a comparator is formed coupled to both an output of the firstevaluation unit and an output of the second evaluation unit. Thecomparator is formed with an output node to operatively provide a signalindicative of a majority of ones or zeros in the data bits from acomparison of the outputs from the first and second evaluation units. Inan embodiment, the first and second evaluation units and the comparatorin a device are formed to enable operative data bit inversion of theplurality of data bits based on the signal indicative of a majority ofones or zeros from the comparator such that the data bit inversion isoperatively conducted within the device. In an embodiment, forming anapparatus includes, but is not limited to, forming a DRAM.

Embodiments of methods for forming a structure to operatively provide asignal indicative of a majority of ones or zeros in data bits examinedmay include forming the structure as part of a memory device. Such astructure formed as part of a memory device may be located within thememory device such that operation of the structure allows reduction inpower consumption in the memory device relative to the memory device notutilizing such a structure. In various embodiments, the structures maybe formed in other apparatus and may be formed in memory devicesconstructed as part of a system. Conventional techniques for memorydevices and system may be implemented in forming various embodiments ofa majority detection structures, memory devices having a majoritydetection process, and systems constructed with memory devices having amajority detection process, as described herein,

Although specific embodiments have been illustrated and describedherein, it will be appreciated by those of ordinary skill in the artthat any arrangement that is calculated to achieve the same purpose maybe substituted for the specific embodiments shown. Various embodimentsmay use permutations and/or combinations of embodiments describedherein. It is to be understood that the above description is intended tobe illustrative, and not restrictive, and that phraseology orterminology employed herein is for the purpose of description and not oflimitation.

What is claimed is:
 1. An apparatus comprising: a first evaluation unit,the first evaluation unit including: a plurality of input nodes, eachinput node to receive a different one of a plurality of data values; anda number of legs, each leg having a number of access devices such that acontrol terminal of each access device is coupled to a different one ofthe input nodes, the legs arranged in parallel with each other, thenumber of access devices in each leg being greater than or equal to two;a second evaluation unit the second evaluation unit including: aplurality of input nodes to receive the plurality of data valuesinverted, each input node coupled to receive a different one of theinverted data values; and a number of legs, each leg having a number ofaccess devices such that a control terminal of each access device iscoupled to a different one of the input nodes, the legs arranged inparallel with each other, the number of access devices in each leg beinggreater than or equal to two; and a comparison unit coupled to both anoutput of the first evaluation unit and an output of the secondevaluation unit, the comparison unit having an output node to provide asignal indicative of a majority of one value in the data values.
 2. Theapparatus of claim 1, wherein the plurality of data values is aplurality of data bits, a data bit being a one bit or a zero bit, suchthat the plurality of data bits is equal to the multiplicative productof the number of legs and the number of access devices for each leg inthe first evaluation unit.
 3. The apparatus of claim 1, wherein theaccess devices of the first and second evaluation units includetransistors, the number of access devices in each leg of the first andsecond evaluation units is two, and the control terminal of each accessdevice includes a transistor gate, the two transistors in each leg ofthe first and second evaluation units arranged in series.
 4. Theapparatus of claim 3, wherein the apparatus is arranged such that: thefirst evaluation unit includes a bias transistor in parallel with thelegs of the first evaluation unit with a gate of the bias transistorcoupled to a node to receive a reference voltage; and the secondevaluation unit includes a bias transistor in parallel with the legs ofthe second evaluation unit with a gate of the bias transistor coupled toa node to receive a reference voltage.
 5. The apparatus of claim 4,wherein the apparatus is arranged such that: each leg of the firstevaluation unit is coupled between a reference and the output of thefirst evaluation unit, the output of the first evaluation unitoperatively coupled to a first voltage source through an enabletransistor having a gate configured to receive an enable signal for thefirst evaluation unit; and each leg of the second evaluation unit iscoupled between a reference and the output of the second evaluationunit, the output of the second evaluation unit operatively coupled to asecond voltage source through an enable transistor having a gateconfigured to receive an enable signal for the second evaluation unit.6. The apparatus of claim 5, wherein the apparatus is configured tooperatively provide a clock signal as the enable signal for the firstevaluation unit.
 7. The apparatus of claim 6, wherein the apparatusincludes a delay unit arranged to receive the clock signal and toprovide the enable signal as a delayed version of the clock signal witha delay correlated to clocking of the data values to the firstevaluation unit.
 8. The apparatus of claim 1, wherein the comparisonunit is arranged to provide the signal indicative of a majority of onevalue in the data values as a data bit inversion signal to a data bitinversion of a memory device.
 9. A memory device comprising: data senseamplifiers; a majority detector coupled to the data sense amplifiers,the majority detector including: a first evaluation unit, the firstevaluation unit including: a plurality of input nodes, each input nodeto receive a different one of a plurality of data values; and a numberof legs, each leg having a number of access devices such that a controlterminal of each access device is coupled to a different one of theinput nodes, the legs arranged in parallel with each other, the numberof access devices in each leg being greater than or equal to two; asecond evaluation unit the second evaluation unit including: a pluralityof input nodes to receive the plurality of data values inverted, eachinput node coupled to receive a different one of the inverted datavalues; and a number of legs, each leg having a number of access devicessuch that a control terminal of each access device is coupled to adifferent one of the input nodes, the legs arranged in parallel witheach other, the number of access devices in each leg being greater thanor equal to two; and a comparison unit coupled to both an output of thefirst evaluation unit and an output of the second evaluation unit, thecomparison unit having an output node to provide a signal indicative ofwhether the plurality of data values comprises more one bits or morezero bits.
 10. The memory device of claim 9, wherein the comparison unitis structured as an amplifier coupled to a first control transistor witha first gate operatively coupled to a first clock signal, the amplifiercoupled to second control transistor with a second gate operativelycoupled to a second clock signal.
 11. The memory device of claim 10,wherein the first and second clock signals are timing waveformscorrelated to data commands or data requests.
 12. The memory device ofclaim 10, wherein the first clock signal and the second clock signal area same signal.
 13. The memory device of claim 9, wherein the memorydevice includes a delay unit arranged to receive a clock signal that isoperatively input to the data sense amplifiers such that the delay unitoperatively provides one or more delayed versions of the clock signal tothe majority detector.
 14. The memory device of claim 13, whereinstructure of the delay unit is correlated to a processing time of thedata sense amplifiers.
 15. The memory device of claim 9, wherein thefirst evaluation unit and the second evaluation unit each include a biastransistor and an enable transistor coupled to the respective legs ofthe first evaluation unit and the second evaluation unit such that rangeof voltage swings in operation of the majority detector is controlled bythe on-resistances of the bias transistors and the enable transistors.16. A method comprising: applying a majority detection process in amemory device, with respect to output of data stored in the memorydevice, to determine whether a plurality of data bits comprises more onebits or more zero bits, the plurality of data bits being a subset ofbits representing the data, the majority detection process using amajority detector, the majority detector including: a first evaluationunit, the first evaluation unit having: a plurality of input nodes, eachinput node to receive a different one of a plurality of data bits; and anumber of legs, each leg having a number of access devices such that acontrol terminal of each access device is coupled to a different one ofthe input nodes, the legs arranged in parallel with each other, thenumber of access devices in each leg being greater than or equal to two;a second evaluation unit the second evaluation unit including: aplurality of input nodes to receive the plurality of data bits inverted,each input node coupled to receive a different one of the inverted databits; and a number of legs, each leg having a number of access devicessuch that a control terminal of each access device is coupled to adifferent one of the input nodes, the legs arranged in parallel witheach other, the number of access devices in each leg being greater thanor equal to two; and a comparison unit coupled to both an output of thefirst evaluation unit and an output of the second evaluation unit, thecomparison unit having an output node to provide a signal indicative ofwhether the plurality of data bits comprises more one bits or more zerobits; generating the signal indicative of the plurality of data bitscomprising more one bits or more zero bits as a data bit inversionsignal representative of the determination; and providing the data bits,an inversion of the data bits, or a combination of some of the data bitsinverted and the other bits of the data bits non-inverted, based on thedata bit inversion signal, prior to output of the data from the memorydevice.
 17. The method of claim 16, wherein the method includesproviding the data bits, the inversion of the data bits, or thecombination of some of the data bits inverted and the other bits of thedata bits non-inverted, based on the data bit inversion signal, prior topre-charging prior to output of the data from the memory device.
 18. Themethod of claim 17, wherein the data bits of the plurality of data bitsare the bits representing the data stored in the memory device and beingprocessed for output from the memory device.
 19. The method of claim 18,wherein the method includes providing the data bits inverted or the databits non-inverted based on the data inversion signal.
 20. The method ofclaim 17, wherein the bits representing the data stored in the memorydevice and being processed for output from the memory device include oneor more bits in addition to the plurality of data bits such that the oneor more bits are excluded from the majority detection process.
 21. Themethod of claim 20, wherein the method includes providing a combinationof some of the data bits inverted and the other bits of the data bitsnon-inverted based on a plurality of data inversion signals.